DiodesZetex DMT Type N-Channel MOSFET, 75 A, 60 V Enhancement, 3-Pin TO-251 DMT69M5LH3
- RS Stock No.:
- 222-2883
- Mfr. Part No.:
- DMT69M5LH3
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD23.55
(exc. GST)
SGD25.675
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.942 | SGD23.55 |
| 50 - 75 | SGD0.848 | SGD21.20 |
| 100 - 475 | SGD0.764 | SGD19.10 |
| 500 - 975 | SGD0.687 | SGD17.18 |
| 1000 + | SGD0.619 | SGD15.48 |
*price indicative
- RS Stock No.:
- 222-2883
- Mfr. Part No.:
- DMT69M5LH3
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 96W | |
| Typical Gate Charge Qg @ Vgs | 28.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.3 mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 96W | ||
Typical Gate Charge Qg @ Vgs 28.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 150°C | ||
Width 2.3 mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 6.1mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low on-resistance
Low input capacitance
Small form factor thermally efficient package enables higher density end products
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