DiodesZetex DMT Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 6-Pin UDFN DMT6030LFCL-7
- RS Stock No.:
- 222-2879
- Mfr. Part No.:
- DMT6030LFCL-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD13.675
(exc. GST)
SGD14.90
(inc. GST)
Add 400 units to get free delivery
Last RS stock
- Final 2,800 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.547 | SGD13.68 |
| 50 - 75 | SGD0.492 | SGD12.30 |
| 100 - 225 | SGD0.443 | SGD11.08 |
| 250 - 975 | SGD0.398 | SGD9.95 |
| 1000 + | SGD0.359 | SGD8.98 |
*price indicative
- RS Stock No.:
- 222-2879
- Mfr. Part No.:
- DMT6030LFCL-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | UDFN | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 1.58W | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.575 mm | |
| Length | 1.6mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type UDFN | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 1.58W | ||
Maximum Operating Temperature 150°C | ||
Width 0.575 mm | ||
Length 1.6mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
PCB Footprint of 2.56mm2
Totally Lead-Free & Fully RoHS Compliant
Related links
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 6-Pin UDFN
- DiodesZetex DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN
- DiodesZetex DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN DMT3006LFDFQ-7
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020
- DiodesZetex Dual DMT Type N-Channel MOSFET 30 V Enhancement, 6-Pin UDFN-2020 DMT3020LFDBQ-7
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI3333
- DiodesZetex DMT Type N-Channel MOSFET 60 V Enhancement, 8-Pin VDFN