Vishay TrenchFET Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 SQD40020EL_GE3
- RS Stock No.:
- 188-5068
- Mfr. Part No.:
- SQD40020EL_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD19.86
(exc. GST)
SGD21.65
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 3,440 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.986 | SGD19.86 |
| 50 - 90 | SGD1.977 | SGD19.77 |
| 100 - 490 | SGD1.957 | SGD19.57 |
| 500 - 1490 | SGD1.865 | SGD18.65 |
| 1500 + | SGD1.604 | SGD16.04 |
*price indicative
- RS Stock No.:
- 188-5068
- Mfr. Part No.:
- SQD40020EL_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0022Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 165nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.57mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 10.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0022Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 165nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.57mm | ||
Standards/Approvals AEC-Q101 | ||
Length 10.41mm | ||
Automotive Standard AEC-Q101 | ||
Automotive N-Channel 40 V (D-S) 175 °C MOSFET.
TrenchFET® power MOSFET
Package with low thermal resistance
Related links
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