N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK Vishay SQD50034E_GE3
- RS Stock No.:
- 188-5081
- Mfr. Part No.:
- SQD50034E_GE3
- Manufacturer:
- Vishay
Subtotal (1 pack of 10 units)**
SGD19.65
(exc. GST)
SGD21.42
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 40 | SGD1.965 | SGD19.65 |
| 50 - 90 | SGD1.923 | SGD19.23 |
| 100 - 490 | SGD1.865 | SGD18.65 |
| 500 - 990 | SGD1.81 | SGD18.10 |
| 1000 + | SGD1.756 | SGD17.56 |
**price indicative
- RS Stock No.:
- 188-5081
- Mfr. Part No.:
- SQD50034E_GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.41mm | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Height | 4.57mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.5V | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.41mm | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Height 4.57mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.5V | ||
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