Vishay TrenchFET Type N-Channel MOSFET, 4.3 A, 60 V Enhancement, 3-Pin SOT-23

This image is representative of the product range

Stock information currently inaccessible
RS Stock No.:
180-7400
Mfr. Part No.:
SQ2362ES-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.3A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.6nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

3W

Maximum Operating Temperature

175°C

Length

3.04mm

Standards/Approvals

No

Height

1.12mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 95mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 3W and continuous drain current of 4.3A. It has a driving voltage of 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy