Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3
- RS Stock No.:
- 180-7943
- Mfr. Part No.:
- SQ2308CES-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 20 units)*
SGD13.28
(exc. GST)
SGD14.48
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 22,980 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | SGD0.664 | SGD13.28 |
| 100 - 480 | SGD0.66 | SGD13.20 |
| 500 - 980 | SGD0.642 | SGD12.84 |
| 1000 - 1980 | SGD0.607 | SGD12.14 |
| 2000 + | SGD0.539 | SGD10.78 |
*price indicative
- RS Stock No.:
- 180-7943
- Mfr. Part No.:
- SQ2308CES-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 164mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 164mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 175°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 150mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Typical ESD performance 1500V
Applications
• Adaptor switch
• DC/DC converter
• Load switch
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
Related links
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2308BDS-T1-E3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2362ES-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SQ2318AES-T1_GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23