Vishay TrenchFET Gen IV Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 200-6840
- Mfr. Part No.:
- SIDR638DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD68.225
(exc. GST)
SGD74.375
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 08 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | SGD2.729 | SGD68.23 |
| 100 - 475 | SGD2.481 | SGD62.03 |
| 500 - 975 | SGD2.273 | SGD56.83 |
| 1000 - 1475 | SGD2.098 | SGD52.45 |
| 1500 + | SGD1.948 | SGD48.70 |
*price indicative
- RS Stock No.:
- 200-6840
- Mfr. Part No.:
- SIDR638DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.16mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 204nC | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Height | 0.61mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.16mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 204nC | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Height 0.61mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay SIDR638DP-T1-RE3 is a N-channel 40V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
Top side cooling feature provides additional venue for thermal transfer
100 % Rg and UIS tested
Related links
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