Vishay TrenchFET Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 SQD40020E_GE3
- RS Stock No.:
- 188-5048
- Mfr. Part No.:
- SQD40020E_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD17.64
(exc. GST)
SGD19.23
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 1,960 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.764 | SGD17.64 |
| 50 - 90 | SGD1.756 | SGD17.56 |
| 100 - 490 | SGD1.74 | SGD17.40 |
| 500 - 1490 | SGD1.659 | SGD16.59 |
| 1500 + | SGD1.429 | SGD14.29 |
*price indicative
- RS Stock No.:
- 188-5048
- Mfr. Part No.:
- SQD40020E_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | TO-252 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.00233Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 9.65 mm | |
| Height | 4.57mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type TO-252 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.00233Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Standards/Approvals AEC-Q101 | ||
Width 9.65 mm | ||
Height 4.57mm | ||
Automotive Standard AEC-Q101 | ||
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
TrenchFET® power MOSFET
Package with low thermal resistance
Related links
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