Vishay SiHW21N80AE N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247 SIHW21N80AE-GE3

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RS Stock No.:
188-4880
Mfr. Part No.:
SIHW21N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Series

SiHW21N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

235mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

32W

Typical Gate Charge Qg @ Vgs

48nC

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

16.26mm

Width

5.31mm

Standards/Approvals

No

Height

21.46mm

Automotive Standard

No

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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