N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AD Vishay SIHW21N80AE-GE3

RS Stock No.:: 188-4880
Mfr. Part No.:: SIHW21N80AE-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AD Vishay SIHW21N80AE-GE3

Bulk discount available

Price Each (In a Tube of 30)

SGD4.273

(exc. GST)

SGD4.658

(inc. GST)

Temporarily out of stock - back order for despatch 11/04/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
30 - 90	SGD4.273	SGD128.19
120 - 270	SGD4.144	SGD124.32
300 - 570	SGD3.979	SGD119.37
600 - 1170	SGD3.78	SGD113.40
1200 +	SGD3.553	SGD106.59

**price indicative

RS Stock No.:: 188-4880
Mfr. Part No.:: SIHW21N80AE-GE3
Manufacturer:: Vishay

Datasheet SIHW21N80AE-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17.4 A
Maximum Drain Source Voltage	800 V
Package Type	TO-247AD
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	235 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	32 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Width	5.31mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	48 nC @ 10 V
Length	16.26mm
Height	21.46mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AD Vishay SIHW21N80AE-GE3

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