Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T1-GE3
- RS Stock No.:
- 735-128
- Mfr. Part No.:
- SIHB21N80AE-T1-GE3
- Manufacturer:
- Vishay
N
Bulk discount available
Subtotal (1 tape of 1 unit)*
SGD5.99
(exc. GST)
SGD6.53
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 24 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | SGD5.99 |
| 10 - 49 | SGD3.71 |
| 50 - 99 | SGD2.88 |
| 100 + | SGD1.95 |
*price indicative
- RS Stock No.:
- 735-128
- Mfr. Part No.:
- SIHB21N80AE-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | SIHB21N80AE | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.205Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 0.42mm | |
| Standards/Approvals | RoHS | |
| Width | 0.355mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series SIHB21N80AE | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.205Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 0.42mm | ||
Standards/Approvals RoHS | ||
Width 0.355mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET designed for efficient operation in power supplies and other applications, aimed at reducing energy losses and enhancing reliability.
Compact D2PAK package for space-saving designs
Reduced switching and conduction losses for improved performance
Related links
- Vishay SIHB21N80AE N channel-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay SiHW21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHW21N80AE-GE3
- Vishay SiHG21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 SIHG21N80AE-GE3
- Vishay SiHG21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay SiHW21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263