Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3
- RS Stock No.:
- 735-129
- Mfr. Part No.:
- SIHB21N80AE-T5-GE3
- Manufacturer:
- Vishay
N
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | SGD5.99 |
| 10 - 49 | SGD3.71 |
| 50 - 99 | SGD2.88 |
| 100 + | SGD1.95 |
*price indicative
- RS Stock No.:
- 735-129
- Mfr. Part No.:
- SIHB21N80AE-T5-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | SIHB21N80AE | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.205Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.355mm | |
| Standards/Approvals | RoHS | |
| Length | 0.42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series SIHB21N80AE | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.205Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Width 0.355mm | ||
Standards/Approvals RoHS | ||
Length 0.42mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET offers high efficiency and robust performance in power supplies, suitable for demanding applications in server and telecom environments. It is designed to optimise energy management and minimise losses.
Low effective capacitance contributing to Faster response times
Single configuration streamlines design and integration
Related links
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- Vishay SiHG21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay SiHW21N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263