onsemi NTE Type N-Channel MOSFET, 915 mA, 20 V Enhancement, 3-Pin SC-89 NTE4153NT1G
- RS Stock No.:
- 184-1203
- Mfr. Part No.:
- NTE4153NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
SGD19.70
(exc. GST)
SGD21.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 5,300 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | SGD0.197 | SGD19.70 |
| 500 - 900 | SGD0.187 | SGD18.70 |
| 1000 - 1400 | SGD0.178 | SGD17.80 |
| 1500 - 1900 | SGD0.169 | SGD16.90 |
| 2000 + | SGD0.16 | SGD16.00 |
*price indicative
- RS Stock No.:
- 184-1203
- Mfr. Part No.:
- NTE4153NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 915mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTE | |
| Package Type | SC-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Power Dissipation Pd | 300mW | |
| Typical Gate Charge Qg @ Vgs | 1.82nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Width | 0.95 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 915mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTE | ||
Package Type SC-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Power Dissipation Pd 300mW | ||
Typical Gate Charge Qg @ Vgs 1.82nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Width 0.95 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Small Signal MOSFET 20V 915mA 230 mOhm Single N-Channel SC-89 with ESD Protection
Low RDS(on) Improving System Efficiency
Low Threshold Voltage, 1.5V Rated
ESD Protected Gate
Applications:
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
Related links
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