DiodesZetex DMP2040UVT Type P-Channel MOSFET, 5.5 A, 20 V Enhancement, 6-Pin TSOT DMP2040UVT-7
- RS Stock No.:
- 182-7069
- Mfr. Part No.:
- DMP2040UVT-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD21.25
(exc. GST)
SGD23.15
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 19 January 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | SGD0.425 | SGD21.25 |
| 250 - 450 | SGD0.34 | SGD17.00 |
| 500 - 950 | SGD0.309 | SGD15.45 |
| 1000 - 1950 | SGD0.274 | SGD13.70 |
| 2000 + | SGD0.257 | SGD12.85 |
*price indicative
- RS Stock No.:
- 182-7069
- Mfr. Part No.:
- DMP2040UVT-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOT | |
| Series | DMP2040UVT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOT | ||
Series DMP2040UVT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
DC-DC Converters
Motor Control
Power Management Functions
Analog Switch
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