DiodesZetex DMP Type P-Channel MOSFET, -5.5 A, 20 V Enhancement, 6-Pin DFN DMP2035UFDF-7
- RS Stock No.:
- 133-3356
- Mfr. Part No.:
- DMP2035UFDF-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD22.15
(exc. GST)
SGD24.15
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 850 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | SGD0.443 | SGD22.15 |
| 250 - 950 | SGD0.433 | SGD21.65 |
| 1000 - 1950 | SGD0.42 | SGD21.00 |
| 2000 - 2950 | SGD0.408 | SGD20.40 |
| 3000 + | SGD0.395 | SGD19.75 |
*price indicative
- RS Stock No.:
- 133-3356
- Mfr. Part No.:
- DMP2035UFDF-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -5.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | DFN | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.03W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2 mm | |
| Height | 0.6mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -5.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type DFN | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.03W | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2 mm | ||
Height 0.6mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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