Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

RS Stock No.:: 822-2532
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 100)

SGD0.477

(exc. GST)

SGD0.52

(inc. GST)

76600 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
100 - 500	SGD0.477	SGD47.70
600 - 1400	SGD0.463	SGD46.30
1500 +	SGD0.449	SGD44.90

**price indicative

RS Stock No.:: 822-2532
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

DMG6602SVT-7 Complementary Pair Enhancement MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.1 A, 3.4 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	100 mΩ, 140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.27 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
Length	2.9mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Transistor Material	Si
Width	1.6mm
Minimum Operating Temperature	-55 °C
Height	0.9mm

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

Dual N/P-Channel MOSFET, Diodes Inc.

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