Vishay Single 1 N-Channel Power MOSFET, 7.9 A, 250 V TO-220FP IRFI644GPBF
- RS Stock No.:
- 180-8661
- Distrelec Article No.:
- 304-30-844
- Mfr. Part No.:
- IRFI644GPBF
- Manufacturer:
- Vishay
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SGD21.77
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- Plus 290 unit(s) shipping from 16 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 5 | SGD3.994 | SGD19.97 | - |
| 10 - 20 | SGD3.804 | SGD19.02 | SGD1.90 |
| 25 + | SGD3.172 | SGD15.86 | SGD20.55 |
*price indicative
- RS Stock No.:
- 180-8661
- Distrelec Article No.:
- 304-30-844
- Mfr. Part No.:
- IRFI644GPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220FP | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Maximum Power Dissipation Pd | 40W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220FP | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Maximum Power Dissipation Pd 40W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220-3 package is a new age product with a drain-source voltage of 250V and maximum gate-source voltage of 20V. It has a drain-source resistance of 77mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 48W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dynamic dV/dt rating
• Isolated package
• Lead (Pb) free component
• Low thermal resistance
• Operating temperature ranges between -55°C and 150°C
• Sink to lead creepage distance is 4.8 mm
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
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