Vishay Single 1 Type N-Channel Power MOSFET, 2.2 A, 600 V, 3-Pin IRFBC20SPBF

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Subtotal (1 tube of 50 units)*

SGD81.70

(exc. GST)

SGD89.05

(inc. GST)

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  • Shipping from 10 November 2026
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Units
Per unit
Per Tube*
50 - 50SGD1.634SGD81.70
100 - 450SGD1.585SGD79.25
500 - 950SGD1.538SGD76.90
1000 - 1950SGD1.491SGD74.55
2000 +SGD1.446SGD72.30

*price indicative

RS Stock No.:
180-8314
Mfr. Part No.:
IRFBC20SPBF
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.2A

Maximum Drain Source Voltage Vds

600V

Mount Type

Through Hole, Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.4Ω

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

3.1W

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay IRFBC20S is a N-channel power MOSFET having drain to source(Vds) voltage of 600V.The gate to source voltage(VGS) is 20V. It is having I2PAK (TO-262) and D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 4.4ohms at 10VGS. Maximum drain current 2.2A.

Surface mount

Dynamic dV/dt rating

150 °C operating temperature

Fast switching

Fully avalanche rated

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