Vishay Single 1 Type N-Channel Power MOSFET, 5 A, 500 V, 3-Pin IRF830ALPBF

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Subtotal (1 tube of 50 units)*

SGD86.75

(exc. GST)

SGD94.55

(inc. GST)

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Units
Per unit
Per Tube*
50 - 50SGD1.735SGD86.75
100 - 450SGD1.467SGD73.35
500 - 950SGD1.232SGD61.60
1000 - 1950SGD1.039SGD51.95
2000 +SGD0.931SGD46.55

*price indicative

RS Stock No.:
180-8307
Mfr. Part No.:
IRF830ALPBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

500V

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

74W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Height

4.83mm

Length

9.65mm

Width

10.67 mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 1.4mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 74W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Fully characterized capacitance and avalanche voltage and current

• Halogen free

• Improved gate, avalanche and dynamic dV/dt

• Lead (Pb) free component

• Low gate charge Qg results in simple drive requirement

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• High speed power switching

• Switch mode power supply (SMPS)

• Uninterruptible power supplies

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