Vishay Single 1 Type N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IRLR110PBF
- RS Stock No.:
- 180-8363
- Mfr. Part No.:
- IRLR110PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 75 units)*
SGD51.975
(exc. GST)
SGD56.625
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 450 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | SGD0.693 | SGD51.98 |
| 150 - 525 | SGD0.624 | SGD46.80 |
| 600 - 2325 | SGD0.561 | SGD42.08 |
| 2400 - 4725 | SGD0.505 | SGD37.88 |
| 4800 + | SGD0.455 | SGD34.13 |
*price indicative
- RS Stock No.:
- 180-8363
- Mfr. Part No.:
- IRLR110PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.54Ω | |
| Typical Gate Charge Qg @ Vgs | 6.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Length | 9.65mm | |
| Width | 6.73 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.54Ω | ||
Typical Gate Charge Qg @ Vgs 6.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Length 9.65mm | ||
Width 6.73 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-252-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 10V. It has a drain-source resistance of 540mohm at a gate-source voltage of 5V. The MOSFET has a maximum power dissipation of 25W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Available in tape and reel
• Dynamic dV/dt rating
• Halogen and lead (Pb) free component
• Logic-level gate drive
• Operating temperature ranges between -55°C and 150°C
• RDS (on) specified at VGS is 4V and 5V
• Repetitive avalanche rated
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
Related links
- Vishay Single 1 Type N-Channel MOSFET 100 V, 3-Pin
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- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 800 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 200 V, 3-Pin
- Vishay Single 1 Type N-Channel MOSFET 100 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 50 V, 3-Pin TO-220AB