Vishay Single 1 Type P-Channel Power MOSFET, 11 A, 60 V TO-220AB IRF9Z24PBF
- RS Stock No.:
- 180-8309
- Mfr. Part No.:
- IRF9Z24PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD60.80
(exc. GST)
SGD66.25
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 13 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD1.216 | SGD60.80 |
| 100 - 450 | SGD1.095 | SGD54.75 |
| 500 - 950 | SGD0.985 | SGD49.25 |
| 1000 - 1950 | SGD0.887 | SGD44.35 |
| 2000 + | SGD0.798 | SGD39.90 |
*price indicative
- RS Stock No.:
- 180-8309
- Mfr. Part No.:
- IRF9Z24PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 280mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 60W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• Repetitive avalanche rated
• Simple drive requirements
• TrenchFET power MOSFET
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
Related links
- Vishay Single 1 Type P-Channel Power MOSFET 60 V TO-220AB
- Vishay Single 1 Type P-Channel Power MOSFET 60 V TO-263
- Vishay Single 1 Type P-Channel Power MOSFET 60 V TO-263 IRF9Z24SPBF
- Vishay Single 1 Type P-Channel Power MOSFET 50 V TO-220AB
- Vishay Single 1 Type P-Channel Power MOSFET 50 V TO-220AB IRF9Z30PBF
- Vishay Single 1 Type P-Channel Power MOSFET 100 V TO-263
- Vishay Single 1 Type P-Channel Power MOSFET 60 V, 3-Pin
- Vishay Single 1 Type P-Channel Power MOSFET 100 V TO-263 IRF9520SPBF