Vishay Single 1 Type N-Channel Power MOSFET, 14 A, 100 V, 3-Pin TO-263 IRF530SPBF
- RS Stock No.:
- 180-8299
- Mfr. Part No.:
- IRF530SPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD61.25
(exc. GST)
SGD66.75
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 250 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD1.225 | SGD61.25 |
| 100 - 450 | SGD1.164 | SGD58.20 |
| 500 - 950 | SGD1.105 | SGD55.25 |
| 1000 - 1950 | SGD1.05 | SGD52.50 |
| 2000 + | SGD0.998 | SGD49.90 |
*price indicative
- RS Stock No.:
- 180-8299
- Mfr. Part No.:
- IRF530SPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 2.5V | |
| Maximum Power Dissipation Pd | 88W | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Width | 10.67 mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Length | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 2.5V | ||
Maximum Power Dissipation Pd 88W | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Width 10.67 mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Length 9.65mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 160mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 88W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Available in tape and reel
• Dynamic dV/dt rating
• Ease of paralleling
• Fast switching
• Halogen free
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• Repetitive avalanche rated
• TrenchFET power MOSFET
Applications
• Battery chargers
• Inverters
• Power supplies
• Switching mode power supply (SMPS)
Related links
- Vishay Single 1 Type N-Channel Power MOSFET 100 V, 3-Pin TO-263
- Vishay Single 1 Type N-Channel Power MOSFET 200 V TO-263
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- Vishay Single 1 Type N-Channel Power MOSFET 200 V TO-263 IRF620SPBF
- Vishay Single 1 Type N-Channel Power MOSFET 60 V, 3-Pin TO-263 IRLZ44SPBF
- Vishay Single 1 Type N-Channel Power MOSFET 500 V TO-220FP
- Vishay Single 1 Type N-Channel Power MOSFET 60 V TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 500 V