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Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3

RS Stock No.:: 180-7948
Mfr. Part No.:: SI4447ADY-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3

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Bulk discount available

Subtotal (1 pack of 20 units)*

SGD14.22

(exc. GST)

SGD15.50

(inc. GST)

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In Stock

20 unit(s) ready to ship from another location
Plus 3,240 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Pack*
20 - 20	SGD0.711	SGD14.22
40 - 80	SGD0.675	SGD13.50
100 - 480	SGD0.642	SGD12.84
500 - 980	SGD0.61	SGD12.20
1000 +	SGD0.58	SGD11.60

*price indicative

RS Stock No.:: 180-7948
Mfr. Part No.:: SI4447ADY-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	40V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	62mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11.8nC
	Maximum Power Dissipation Pd	2.7W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.75mm
	Length	5mm
	Width	6.2 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 40V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 62mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11.8nC
	Maximum Power Dissipation Pd 2.7W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.75mm
	Length 5mm
	Width 6.2 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 45mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 7.2A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

• Notebook PCs

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested