Vishay Single E Type N-Channel MOSFET, 21 A, 600 V TO-220 SIHA22N60E-E3
- RS Stock No.:
- 180-7900
- Mfr. Part No.:
- SIHA22N60E-E3
- Manufacturer:
- Vishay
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Subtotal (1 pack of 2 units)*
SGD14.14
(exc. GST)
SGD15.42
(inc. GST)
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- Shipping from 12 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD7.07 | SGD14.14 |
| 10 - 28 | SGD6.895 | SGD13.79 |
| 30 + | SGD6.375 | SGD12.75 |
*price indicative
- RS Stock No.:
- 180-7900
- Mfr. Part No.:
- SIHA22N60E-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | E | |
| Maximum Drain Source Resistance Rds | 0.18Ω | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | No | |
| Length | 13.8mm | |
| Width | 10.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series E | ||
Maximum Drain Source Resistance Rds 0.18Ω | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals No | ||
Length 13.8mm | ||
Width 10.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SIHA22N60E is a E series N-channel power MOSFET having drain to source(Vds) voltage of 600V.The gate to source voltage(VGS) is 30V. It is having Thin-Lead TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 0.18ohms at 10VGS. Maximum drain current 8A.
Low figure of merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
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