Infineon HEXFET Type N-Channel MOSFET, 85 A, 150 V Enhancement, 3-Pin TO-220

RS Stock No.:: 178-1416
Mfr. Part No.:: IRFB4321PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 85 A, 150 V Enhancement, 3-Pin TO-220

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

SGD187.90

(exc. GST)

SGD204.80

(inc. GST)

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Temporarily out of stock

350 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Tube*
50 - 100	SGD3.758	SGD187.90
150 - 200	SGD3.617	SGD180.85
250 +	SGD3.391	SGD169.55

*price indicative

RS Stock No.:: 178-1416
Mfr. Part No.:: IRFB4321PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	85A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	15mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	71nC
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	350W
	Maximum Operating Temperature	175°C
	Length	10.66mm
	Height	9.02mm
	Standards/Approvals	No
	Width	4.82 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 85A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 15mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 71nC
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 350W
	Maximum Operating Temperature 175°C
	Length 10.66mm
	Height 9.02mm
	Standards/Approvals No
	Width 4.82 mm
	Automotive Standard No

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