Infineon HEXFET Type N-Channel MOSFET, 17 A, 150 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 688-6920
- Mfr. Part No.:
- IRFB4019PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD11.52
(exc. GST)
SGD12.555
(inc. GST)
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In Stock
- Plus 65 unit(s) shipping from 29 December 2025
- Plus 375 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD2.304 | SGD11.52 |
| 25 - 95 | SGD2.256 | SGD11.28 |
| 100 - 245 | SGD2.188 | SGD10.94 |
| 250 - 495 | SGD2.122 | SGD10.61 |
| 500 + | SGD2.056 | SGD10.28 |
*price indicative
- RS Stock No.:
- 688-6920
- Mfr. Part No.:
- IRFB4019PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 80W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-43-451 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 80W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-43-451 | ||
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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