Vishay IRFD Type N-Channel MOSFET, 1.3 A, 100 V Enhancement, 4-Pin HVMDIP IRFD120PBF

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Subtotal (1 tube of 100 units)*

SGD100.80

(exc. GST)

SGD109.90

(inc. GST)

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Units
Per unit
Per Tube*
100 - 200SGD1.008SGD100.80
300 - 400SGD0.97SGD97.00
500 +SGD0.909SGD90.90

*price indicative

RS Stock No.:
178-0921
Mfr. Part No.:
IRFD120PBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.3A

Maximum Drain Source Voltage Vds

100V

Series

IRFD

Package Type

HVMDIP

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

270mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16nC

Forward Voltage Vf

2.5V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.3W

Maximum Operating Temperature

175°C

Length

5mm

Width

6.29 mm

Height

3.37mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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