Toshiba N-Channel MOSFET, 30.8 A, 600 V Enhancement, 5-Pin DFN
- RS Stock No.:
- 171-2421
- Mfr. Part No.:
- TK31V60W5
- Manufacturer:
- Toshiba
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-2421
- Mfr. Part No.:
- TK31V60W5
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 109mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 240W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | -1.7V | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 8mm | |
| Length | 8mm | |
| Height | 0.85mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 109mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 240W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf -1.7V | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Maximum Operating Temperature 150°C | ||
Width 8mm | ||
Length 8mm | ||
Height 0.85mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Switching Voltage Regulators
Fast reverse recovery time: trr = 135 ns (typ.)
Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)
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