Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S

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Subtotal (1 pack of 2 units)*

SGD15.17

(exc. GST)

SGD16.54

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD7.585SGD15.17
10 - 18SGD7.43SGD14.86
20 - 48SGD7.215SGD14.43
50 - 98SGD7.00SGD14.00
100 +SGD6.78SGD13.56

*price indicative

RS Stock No.:
125-0563
Mfr. Part No.:
TK31E60X,S1X(S
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

30.8A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

DTMOSIV

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

88mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

65nC

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

-30V, +30V

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Length

10.16mm

Standards/Approvals

No

Width

4.45mm

Height

15.1mm

Automotive Standard

No

COO (Country of Origin):
JP

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