Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S

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Subtotal (1 pack of 2 units)*

SGD10.61

(exc. GST)

SGD11.564

(inc. GST)

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  • 4 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8SGD5.305SGD10.61
10 - 18SGD5.195SGD10.39
20 - 48SGD5.045SGD10.09
50 - 98SGD4.895SGD9.79
100 +SGD4.74SGD9.48

*price indicative

RS Stock No.:
125-0563
Mfr. Part No.:
TK31E60X,S1X(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30.8A

Maximum Drain Source Voltage Vds

600V

Series

DTMOSIV

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

88mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Power Dissipation Pd

230W

Maximum Operating Temperature

150°C

Height

15.1mm

Standards/Approvals

No

Length

10.16mm

Width

4.45 mm

Automotive Standard

No

COO (Country of Origin):
JP

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