Toshiba TK099V65Z N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN TK099V65Z,LQ(S
- RS Stock No.:
- 206-9730
- Mfr. Part No.:
- TK099V65Z,LQ(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 206-9730
- Mfr. Part No.:
- TK099V65Z,LQ(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | DFN | |
| Series | TK099V65Z | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8mm | |
| Height | 500μm | |
| Width | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type DFN | ||
Series TK099V65Z | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8mm | ||
Height 500μm | ||
Width 8mm | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.
Low drain-source on-resistance 0.08 ?
Storage temperature -55 to 150°C
Related links
- Toshiba TK099V65Z N-Channel MOSFET 650 V Enhancement, 5-Pin DFN
- Toshiba N-Channel MOSFET 600 V Enhancement, 5-Pin DFN TK31V60W5
- onsemi NVMFS6H801N N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS5H663NL N-Channel MOSFET 60 V Enhancement, 5-Pin DFN NVMFS5H663NLT1G
- onsemi N-Channel MOSFET 40 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H824N N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H800N N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NTMFS N-Channel MOSFET 40 V Enhancement, 5-Pin DFN NTMFS5C468NLT1G