Toshiba Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON
- RS Stock No.:
- 171-2390P
- Mfr. Part No.:
- TPN2R304PL
- Manufacturer:
- Toshiba
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SGD59.80
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SGD65.20
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In Stock
- 14,880 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 50 - 90 | SGD1.196 |
| 100 - 990 | SGD1.077 |
| 1000 - 2990 | SGD0.978 |
| 3000 + | SGD0.897 |
*price indicative
- RS Stock No.:
- 171-2390P
- Mfr. Part No.:
- TPN2R304PL
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Height 0.85mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
High-Efficiency DC-DC Converters
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 10.8 nC (typ.)
Small output charge: Qoss = 27 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 mA)
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