Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

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Subtotal (1 pack of 10 units)*

SGD7.83

(exc. GST)

SGD8.53

(inc. GST)

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  • Shipping from 19 November 2026
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Units
Per unit
Per Pack*
10 - 40SGD0.783SGD7.83
50 - 90SGD0.705SGD7.05
100 - 990SGD0.644SGD6.44
1000 - 2990SGD0.585SGD5.85
3000 +SGD0.545SGD5.45

*price indicative

Packaging Options:
RS Stock No.:
171-2385
Mfr. Part No.:
TPN14006NH,L1Q(M
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

60V

Package Type

TSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

30W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Height

0.85mm

Standards/Approvals

No

Length

3.1mm

Automotive Standard

No

RoHS Status: Not Applicable

Switching Voltage Regulators

Motor Drivers

DC-DC Converters

High-speed switching

Small gate charge: QSW = 5.5 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

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