MPN

Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

RS Stock No.:: 171-2385
Mfr. Part No.:: TPN14006NH,L1Q(M
Manufacturer:: Toshiba

Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

SGD7.83

(exc. GST)

SGD8.53

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

In Stock

Plus 1,790 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
10 - 40	SGD0.783	SGD7.83
50 - 90	SGD0.705	SGD7.05
100 - 990	SGD0.644	SGD6.44
1000 - 2990	SGD0.585	SGD5.85
3000 +	SGD0.545	SGD5.45

*price indicative

RS Stock No.:: 171-2385
Mfr. Part No.:: TPN14006NH,L1Q(M
Manufacturer:: Toshiba

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	41mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Power Dissipation Pd	30W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.1 mm
	Length	3.1mm
	Standards/Approvals	No
	Height	0.85mm
	Automotive Standard	No

	Select all
	Brand Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 60V
	Package Type TSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 41mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Power Dissipation Pd 30W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.1 mm
	Length 3.1mm
	Standards/Approvals No
	Height 0.85mm
	Automotive Standard No

Datasheet

RoHS Status: Exempt

Switching Voltage Regulators

Motor Drivers

DC-DC Converters

High-speed switching

Small gate charge: QSW = 5.5 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

Toshiba Type N-Channel MOSFET, 65 A, 60 V Enhancement, 8-Pin TSON TPN14006NH,L1Q(M

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

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