MPN

Toshiba N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON TPN2R304PL

Name: Toshiba N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TSON TPN2R304PL
Brand: Toshiba
SKU: 171-2208
Availability: InStock

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Subtotal (1 reel of 5000 units)*

SGD5,000.00

(exc. GST)

SGD5,450.00

(inc. GST)

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Units	Per unit	Per Reel*
5000 - 5000	SGD1.00	SGD5,000.00
10000 +	SGD0.981	SGD4,905.00

*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Power Dissipation Pd	104W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Length	3.1mm
	Width	3.1mm
	Height	850μm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Toshiba
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Package Type TSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Power Dissipation Pd 104W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Length 3.1mm
	Width 3.1mm
	Height 850μm
	Standards/Approvals No
	Automotive Standard No

RoHS Status: Not Applicable

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

High-speed switching

Small gate charge: QSW = 10.8 nC (typ.)

Small output charge: Qoss = 27 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 mA)

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