Toshiba Type N-Channel MOSFET, 92 A, 40 V Enhancement, 8-Pin TSON
- RS Stock No.:
- 171-2363P
- Mfr. Part No.:
- TPN3R704PL
- Manufacturer:
- Toshiba
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SGD76.10
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SGD82.95
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- Shipping from 10 December 2026
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Units | Per unit |
|---|---|
| 50 - 95 | SGD1.522 |
| 100 - 995 | SGD1.446 |
| 1000 + | SGD1.376 |
*price indicative
- RS Stock No.:
- 171-2363P
- Mfr. Part No.:
- TPN3R704PL
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 92A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 86W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 92A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 86W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Height 0.85mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
High-Efficiency DC-DC Converters
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 8.1 nC (typ.)
Small output charge: Qoss = 20.2 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: V = 1.4 to 2.4 V (V = 10 V, I = 0.2 mA)
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