Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF

RS Stock No.:: 170-2320
Mfr. Part No.:: IPT015N10N5ATMA1
Manufacturer:: Infineon

Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF

This image is representative of the product range

Subtotal (1 reel of 2000 units)*

SGD8,536.00

(exc. GST)

SGD9,304.00

(inc. GST)

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Shipping from 01 June 2026

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Units	Per unit	Per Reel*
2000 +	SGD4.268	SGD8,536.00

*price indicative

RS Stock No.:: 170-2320
Mfr. Part No.:: IPT015N10N5ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	100V
	Package Type	HSOF
	Series	IPT015N10N5
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	169nC
	Maximum Operating Temperature	175°C
	Height	2.4mm
	Standards/Approvals	No
	Width	10.58 mm
	Length	10.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 100V
	Package Type HSOF
	Series IPT015N10N5
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 169nC
	Maximum Operating Temperature 175°C
	Height 2.4mm
	Standards/Approvals No
	Width 10.58 mm
	Length 10.1mm
	Automotive Standard No

Datasheet

Infineon MOSFET

The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.5mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• 100% avalanche tested

• Excellent gate charge x RDS (on) product (FOM)

• Halogen free

• Highest system efficiency

• Ideal for high switching frequency

• Increased power density

• Lead (Pb) free plating

• Low voltage overshoot

• Operating temperature ranges between -55°C and 175°C

• Optimized for synchronous rectification

• Output capacitance reduction of up to 44%

• RDS (on) reduction of up to 44%

• Very low on resistance RDS (on)

Applications

• Adapter

• Light electric vehicles

• Low voltage drives

• Server power supplies

• Solar

• Telecommunication

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC