N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2

RS Stock No.:: 168-4791
Mfr. Part No.:: MMIX1T600N04T2
Manufacturer:: IXYS

N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2

This image is representative of the product range

Price Each (In a Tube of 20)

SGD45.462

(exc. GST)

SGD49.554

(inc. GST)

65 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
20 +	SGD45.462	SGD909.24

**price indicative

RS Stock No.:: 168-4791
Mfr. Part No.:: MMIX1T600N04T2
Manufacturer:: IXYS

MMIX1T600N04T2, TrenchT2 GigaMOS Power MOSFET N-Channel 40V 600A SMPD
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	600 A
Maximum Drain Source Voltage	40 V
Package Type	SMPD
Series	GigaMOS, HiperFET
Mounting Type	Surface Mount
Pin Count	24
Maximum Drain Source Resistance	1.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	830 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	23.25mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	25.25mm
Typical Gate Charge @ Vgs	590 nC @ 10 V
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	5.7mm

N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

Related links