IXYS Single GigaMOS, HiperFET 1 N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

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Subtotal (1 tube of 20 units)*

SGD1,338.82

(exc. GST)

SGD1,459.32

(inc. GST)

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Units
Per unit
Per Tube*
20 +SGD66.941SGD1,338.82

*price indicative

RS Stock No.:
146-1770
Mfr. Part No.:
MMIX1F180N25T
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

132A

Maximum Drain Source Voltage Vds

250V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-30V, +30V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

570W

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Length

25.25mm

Width

23.25mm

Height

5.7mm

Number of Elements per Chip

1

COO (Country of Origin):
DE

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