IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD MMIX1T550N055T2
- RS Stock No.:
- 875-2500
- Mfr. Part No.:
- MMIX1T550N055T2
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD66.67
(exc. GST)
SGD72.67
(inc. GST)
Add 3 units to get free delivery
Temporarily out of stock
- Shipping from 07 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD66.67 |
| 10 - 49 | SGD65.34 |
| 50 - 99 | SGD57.29 |
| 100 - 249 | SGD56.16 |
| 250 + | SGD55.04 |
*price indicative
- RS Stock No.:
- 875-2500
- Mfr. Part No.:
- MMIX1T550N055T2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 550A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | GigaMOS, HiperFET | |
| Package Type | SMPD | |
| Mount Type | Surface | |
| Pin Count | 24 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 830W | |
| Typical Gate Charge Qg @ Vgs | 595nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.7mm | |
| Width | 23.25 mm | |
| Standards/Approvals | No | |
| Length | 25.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 550A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series GigaMOS, HiperFET | ||
Package Type SMPD | ||
Mount Type Surface | ||
Pin Count 24 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 830W | ||
Typical Gate Charge Qg @ Vgs 595nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.7mm | ||
Width 23.25 mm | ||
Standards/Approvals No | ||
Length 25.25mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 55 V Enhancement, 24-Pin SMPD
- IXYS Type N-Channel MOSFET 75 V Enhancement, 24-Pin SMPD
- IXYS Type N-Channel MOSFET 40 V Enhancement, 24-Pin SMPD
- IXYS Type N-Channel MOSFET 40 V Enhancement, 24-Pin SMPD MMIX1T600N04T2
- IXYS Type N-Channel MOSFET 75 V Enhancement, 24-Pin SMPD MMIX1F520N075T2
- IXYS Single GigaMOS 132 A 24-Pin SMPD MMIX1F180N25T
- Infineon IQE Type N-Channel MOSFET 25 V Enhancement, 24-Pin TSDSO
- Infineon IQE Type N-Channel MOSFET 25 V Enhancement, 24-Pin TSDSO IQE006NE2LM5CGSCATMA1