Vishay Single Si7129DN 1 Type P, Type P-Channel MOSFET, 35 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
- RS Stock No.:
- 165-6294
- Mfr. Part No.:
- SI7129DN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 165-6294
- Mfr. Part No.:
- SI7129DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8 | |
| Series | Si7129DN | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24.6nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 52.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 1.07mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Width | 3.15 mm | |
| Length | 3.15mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8 | ||
Series Si7129DN | ||
Mount Type Surface, Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24.6nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 52.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 1.07mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Width 3.15 mm | ||
Length 3.15mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8
- Vishay Type P-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8
- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SIS407ADN-T1-GE3
- Vishay Type P-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SIS413DN-T1-GE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8