N-Channel MOSFET, 3.9 A, 30 V, 3-Pin SOT-23 Nexperia PMV50ENEAR
- RS Stock No.:
- 153-0664
- Mfr. Part No.:
- PMV50ENEAR
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal (1 pack of 25 units)**
SGD11.23
(exc. GST)
SGD12.23
(inc. GST)
Temporarily out of stock - back order for despatch 19/05/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
---|---|---|
25 - 225 | SGD0.449 | SGD11.225 |
250 - 600 | SGD0.434 | SGD10.85 |
625 - 1225 | SGD0.412 | SGD10.30 |
1250 - 2475 | SGD0.392 | SGD9.80 |
2500 + | SGD0.372 | SGD9.30 |
**price indicative
- RS Stock No.:
- 153-0664
- Mfr. Part No.:
- PMV50ENEAR
- Manufacturer:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Nexperia | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.9 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 69 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 3.9 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Maximum Operating Temperature | +150 °C | |
Width | 1.4mm | |
Typical Gate Charge @ Vgs | 6 nC @ 10 V | |
Length | 3mm | |
Number of Elements per Chip | 1 | |
Height | 1mm | |
Automotive Standard | AEC-Q101 | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.9 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 69 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.9 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 6 nC @ 10 V | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
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