Nexperia Type N-Channel MOSFET, 6.3 A, 20 V Enhancement, 3-Pin SOT-23 PMV20XNEAR
- RS Stock No.:
- 153-0781
- Mfr. Part No.:
- PMV20XNEAR
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD12.425
(exc. GST)
SGD13.55
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 5,900 unit(s) shipping from 20 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | SGD0.497 | SGD12.43 |
| 250 - 600 | SGD0.486 | SGD12.15 |
| 625 - 1225 | SGD0.471 | SGD11.78 |
| 1250 - 2475 | SGD0.456 | SGD11.40 |
| 2500 + | SGD0.443 | SGD11.08 |
*price indicative
- RS Stock No.:
- 153-0781
- Mfr. Part No.:
- PMV20XNEAR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.9nC | |
| Maximum Power Dissipation Pd | 6.94W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.9nC | ||
Maximum Power Dissipation Pd 6.94W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Related links
- Nexperia Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
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- Nexperia Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23