- RS Stock No.:
- 151-3171
- Mfr. Part No.:
- PMV28UNEAR
- Manufacturer:
- Nexperia
125 In stock for delivery within 4 working days
Added
Price Each (In a Pack of 25)
SGD0.418
(exc. GST)
SGD0.456
(inc. GST)
Units | Per unit | Per Pack* |
25 - 225 | SGD0.418 | SGD10.45 |
250 - 600 | SGD0.403 | SGD10.075 |
625 - 1225 | SGD0.383 | SGD9.575 |
1250 - 2475 | SGD0.364 | SGD9.10 |
2500 + | SGD0.346 | SGD8.65 |
*price indicative |
- RS Stock No.:
- 151-3171
- Mfr. Part No.:
- PMV28UNEAR
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 4.7 A |
Maximum Drain Source Voltage | 20 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 70 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 0.45V |
Maximum Power Dissipation | 3.9 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 8 V |
Typical Gate Charge @ Vgs | 6.2 nC @ 10 V |
Width | 1.4mm |
Length | 3mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Automotive Standard | AEC-Q101 |
Minimum Operating Temperature | -55 °C |
Height | 1mm |