Vishay SiR692DP Type N-Channel MOSFET, 24.2 A, 250 V Enhancement, 8-Pin SO-8 SIR692DP-T1-RE3
- RS Stock No.:
- 134-9731
- Mfr. Part No.:
- SIR692DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD14.25
(exc. GST)
SGD15.55
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 195 | SGD2.85 | SGD14.25 |
| 200 - 395 | SGD2.816 | SGD14.08 |
| 400 - 745 | SGD2.754 | SGD13.77 |
| 750 - 2245 | SGD2.638 | SGD13.19 |
| 2250 + | SGD2.31 | SGD11.55 |
*price indicative
- RS Stock No.:
- 134-9731
- Mfr. Part No.:
- SIR692DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24.2A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SO-8 | |
| Series | SiR692DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24.2A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SO-8 | ||
Series SiR692DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
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