DiodesZetex DMT Type N-Channel MOSFET, 68.8 A, 100 V Enhancement, 4-Pin TO-252 DMT10H010LK3-13
- RS Stock No.:
- 133-3314
- Mfr. Part No.:
- DMT10H010LK3-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD13.11
(exc. GST)
SGD14.29
(inc. GST)
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Temporarily out of stock
- Shipping from 18 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | SGD1.311 | SGD13.11 |
| 250 - 490 | SGD1.272 | SGD12.72 |
| 500 - 990 | SGD1.222 | SGD12.22 |
| 1000 - 2490 | SGD1.16 | SGD11.60 |
| 2500 + | SGD1.09 | SGD10.90 |
*price indicative
- RS Stock No.:
- 133-3314
- Mfr. Part No.:
- DMT10H010LK3-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 53.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.1 mm | |
| Length | 6.58mm | |
| Standards/Approvals | No | |
| Height | 2.29mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 53.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 6.1 mm | ||
Length 6.58mm | ||
Standards/Approvals No | ||
Height 2.29mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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