N-Channel MOSFET, 37.9 A, 650 V, 3-Pin TO-220 Infineon IPP60R099P6XKSA1

RS Stock No.:: 130-0924
Mfr. Part No.:: IPP60R099P6XKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 37.9 A, 650 V, 3-Pin TO-220 Infineon IPP60R099P6XKSA1

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RS Stock No.:: 130-0924
Mfr. Part No.:: IPP60R099P6XKSA1
Manufacturer:: Infineon

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS^™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

Infineon CoolMOS™ P6 Series MOSFET, 37.9A Maximum Continuous Drain Current, 278W Maximum Power Dissipation - IPP60R099P6XKSA1

This MOSFET is tailored for high-performance applications in need of efficient power management. With a maximum continuous drain current of 37.9A and a drain-source voltage rating of 650V, it excels in automation and electronic sectors. Its enhancement mode N-channel configuration allows for effective switching capabilities, making it a preferred option for professionals in the electrical and mechanical industries.

Features & Benefits

• Low RDS(on) of 99mΩ improves switching efficiency
• Can dissipate up to 278W for enhanced durability
• Functions well under high temperatures of up to +150°C
• ESD protection above 2kV ensures dependable operation
• Suitable for both hard and soft switching applications
• Packaged in TO-220 for flexible mounting options

Applications

• Used in PFC stages for efficient power conversion
• Applicable in hard-switching PWM stages to boost performance
• Ideal for resonant switching stages in various electronic products
• Utilised in adapters and power supplies for electronic devices
• Effective in industrial automation systems demanding high power

What is the suitable gate-source voltage range for operation?

The appropriate gate-source voltage range for operation is -30V to +30V, ensuring safe and effective switching.

How does the low RDS(on) value benefit power efficiency?

The low resistance enhances power efficiency by reducing conduction losses, leading to decreased heat generation during operation.

What is the maximum power dissipation capability during usage?

The maximum power dissipation capacity during operation is 278W, allowing robust performance under challenging conditions.

Is there any special consideration for using this component in parallel configurations?

When using in parallel, it is advisable to use ferrite beads on the gate or separate totem poles to optimise performance and minimise oscillations.

What thermal management practices should be implemented?

Effective thermal management practices include proper heat sinking and monitoring temperature during operation to maintain performance within specified limits.

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MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	37.9 A
Maximum Drain Source Voltage	650 V
Series	CoolMOS™ P6
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	99 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	278 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	10.36mm
Typical Gate Charge @ Vgs	70 nC @ 10 V
Maximum Operating Temperature	+150 °C
Width	4.57mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	0.9V
Height	15.95mm