Infineon CoolMOS P6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1
- RS Stock No.:
- 110-9099
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD22.94
(exc. GST)
SGD25.005
(inc. GST)
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In Stock
- 60 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD4.588 | SGD22.94 |
| 50 - 245 | SGD4.49 | SGD22.45 |
| 250 - 495 | SGD4.358 | SGD21.79 |
| 500 - 1245 | SGD4.228 | SGD21.14 |
| 1250 + | SGD4.104 | SGD20.52 |
*price indicative
- RS Stock No.:
- 110-9099
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 151W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 151W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB60R160P6ATMA1
- Infineon CoolMOS P6 Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-220