Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220 IRLB4030PBF

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Subtotal (1 tube of 50 units)*

SGD156.30

(exc. GST)

SGD170.35

(inc. GST)

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Units
Per unit
Per Tube*
50 - 200SGD3.126SGD156.30
250 - 450SGD3.084SGD154.20
500 - 950SGD3.002SGD150.10
1000 - 1950SGD2.842SGD142.10
2000 +SGD2.539SGD126.95

*price indicative

RS Stock No.:
124-9026
Mfr. Part No.:
IRLB4030PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

87nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

370W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

9.02mm

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
MX

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