N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

RS Stock No.:: 124-8963
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

Bulk discount available

Price Each (In a Tube of 50)**

SGD2.544

(exc. GST)

SGD2.773

(inc. GST)

4144 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tube**
50 - 50	SGD2.544	SGD127.20
100 - 200	SGD2.468	SGD123.40
250 - 450	SGD2.369	SGD118.45
500 - 950	SGD2.251	SGD112.55
1000 +	SGD2.116	SGD105.80

**price indicative

RS Stock No.:: 124-8963
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	370 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	150 nC @ 10 V
Width	4.82mm
Length	10.66mm
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.02mm

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

FREE delivery for orders over SGD250.00 (ex GST)

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