N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

RS Stock No.:: 124-8963
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

Bulk discount available

Price Each (In a Tube of 50)

SGD3.254

(exc. GST)

SGD3.547

(inc. GST)

4544 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
50 - 50	SGD3.254	SGD162.70
100 - 200	SGD3.156	SGD157.80
250 - 450	SGD3.03	SGD151.50
500 - 950	SGD2.878	SGD143.90
1000 +	SGD2.706	SGD135.30

**price indicative

RS Stock No.:: 124-8963
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	370 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	4.82mm
Length	10.66mm
Transistor Material	Si
Typical Gate Charge @ Vgs	150 nC @ 10 V
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	9.02mm

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

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