Infineon HEXFET Type N-Channel MOSFET, 200 A, 60 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

SGD68.65

(exc. GST)

SGD74.825

(inc. GST)

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Units
Per unit
Per Tube*
25 - 100SGD2.746SGD68.65
125 - 225SGD2.709SGD67.73
250 - 475SGD2.636SGD65.90
500 - 975SGD2.496SGD62.40
1000 +SGD2.23SGD55.75

*price indicative

RS Stock No.:
124-9012
Mfr. Part No.:
IRFP3206PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

280W

Typical Gate Charge Qg @ Vgs

120nC

Maximum Operating Temperature

175°C

Width

5.31 mm

Standards/Approvals

No

Height

20.7mm

Length

15.87mm

Automotive Standard

No

COO (Country of Origin):
MX

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