Infineon HEXFET Type N-Channel MOSFET, 104 A, 150 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

SGD123.05

(exc. GST)

SGD134.10

(inc. GST)

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Units
Per unit
Per Tube*
50 - 200SGD2.461SGD123.05
250 - 450SGD2.428SGD121.40
500 - 950SGD2.363SGD118.15
1000 - 1950SGD2.237SGD111.85
2000 +SGD1.998SGD99.90

*price indicative

RS Stock No.:
124-9005
Mfr. Part No.:
IRFB4115PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

104A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

380W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

77nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

9.02mm

Width

4.83 mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MX

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