Vishay TrenchFET N channel-Channel MOSFET, 12.3 A, 250 V Enhancement, 8-Pin PowerPack SISS92DN-T1-BE3
- RS Stock No.:
- 931-775
- Mfr. Part No.:
- SISS92DN-T1-BE3
- Manufacturer:
- Vishay
N
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- RS Stock No.:
- 931-775
- Mfr. Part No.:
- SISS92DN-T1-BE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 12.3A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | PowerPack | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.173Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Maximum Power Dissipation Pd | 65.8W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 12.3A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type PowerPack | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.173Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Maximum Power Dissipation Pd 65.8W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3mm | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay high-performance N-channel MOSFET designed for efficient power switching applications, optimising electrical efficiency and thermal performance in various electronic circuits.
TrenchFET technology optimises R DS(on), Q g, Q sw, and Q oss
100% R and UIS tested for reliable performance
Extensive thermal resistance ratings ensure stability under high temperatures
Gate-source voltage tolerance of ±20V enhances safety
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